Carrier Characteristics in Non-uniform Thickness Quantum Well Laser Diode

초록

Recently, the researches that employ quantum well structures with non-uniform width are progressing for different purposes. These quantum well structures with non-uniform width are utilized for broad-band width semiconductor optical amplifier, broad-band width superluminescent diode, broad-band and temperature independent VCSEL(vertical cavity surface emitting laser), etc. Also, they are researched as the structures for wavelength control and wavelength switch about 10 years agoo. For realization of the devices, we have been analyzed the characteristics of these structures. And, we estiated carrier distribution in non-uniform quantum well from lasing wavelength with changing the cavity length and injection current.