Electrical Properties of Polyvinylidene Fluoride Thin Films Prepared by High Electric Field Applying Method

초록

Poly(Vinylidene-Fluoride) thin films were prepared by using a physical vapor deposition and high electric field applying method. Thin films were studied with DSC, FT-IR, X-ray diffraction and electrical conduction measuring system. The melting point of PVDF thin film increases with increasing substrate temperature. It is identified by FT-IR that the crystalline phase of α type PVDF is transformed to β type with increasing electric field applied during preparation. It is found that the crystallinity of PVDF thin films increases from 49.8 to 67% with increasing substrate temperature from 30 to 80 C. The absorption current of α and β type PVDF increases with increasing the electric field applied under measurement and the current increment of β type is higher than that of α type. The ion hopping distance, derived from a relation between current density and measuring temperature, increases from 51.5 to 153.5 with increasing temperature. From above results, the conduction mechanism of PVDF thin film is estimated as ionic.