졸-겔법에 의한 강유전체 박막의 제작

Preperation of PZT ferroelectric thin films by sol-gel processing
  • Lee Duck Chool

초록

Crack-free and homogeneous compact and epitaxial lead zirconate titanate(PZT) ferroelectric thin films with perovsikte structure have been prepared by sol-gel method. Tetrabutyl titanate lead acetate and zirconium nitrate are used as raw materials. Glacial acetic acid is used as a catalyst. Ethylene glycol monoethyl ether is used as a solvent. The annealing temperatures of the thin films are 600-900℃. The values of the remanent polarization Pr, and the coercive field Ec, of the PZT ceramic thon films are 46, 35μC/㎠ respectively.

제목
졸-겔법에 의한 강유전체 박막의 제작
제목 (타언어)
Preperation of PZT ferroelectric thin films by sol-gel processing
저자
Lee Duck Chool
학회명
대한전기학회 하계학술대회