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초록
Crack-free and homogeneous compact and epitaxial lead zirconate titanate(PZT) ferroelectric thin films with perovsikte structure have been prepared by sol-gel method. Tetrabutyl titanate lead acetate and zirconium nitrate are used as raw materials. Glacial acetic acid is used as a catalyst. Ethylene glycol monoethyl ether is used as a solvent. The annealing temperatures of the thin films are 600-900℃. The values of the remanent polarization Pr, and the coercive field Ec, of the PZT ceramic thon films are 46, 35μC/㎠ respectively.
- 제목
- 졸-겔법에 의한 강유전체 박막의 제작
- 제목 (타언어)
- Preperation of PZT ferroelectric thin films by sol-gel processing
- 저자
- Lee Duck Chool
- 학회명
- 대한전기학회 하계학술대회