Environmentally Stable and Reconfigurable Ultralow-Power Two-Dimensional Tellurene Synaptic Transistor for Neuromorphic Edge Computing

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초록

While neuromorphic computing can define a new era for next-generation computing architecture, the introduction of an efficient synaptic transistor for neuromorphic edge computing still remains a challenge. Here, we envision an atomically thin 2D Te synaptic device capable of achieving a desirable neuromorphic edge computing design. The hydrothermally grown 2D Te nanosheet synaptic transistor apparently mimicked the biological synaptic nature, exhibiting 100 effective multilevel states, a low power consumption of similar to 110 fJ, excellent linearity, and short-/ long-term plasticity. Furthermore, the 2D Te synaptic device achieved reconfigurable MNIST recognition accuracy characteristics of 88.2%, even after harmful detergent environment infection. We believe that this work serves as a guide for developing futuristic neuromorphic edge computing.

키워드

ultralow power2D tellureneenvironmentally stablesynaptic transistorsneuromorphic edge computingintensivelyFIELD-EFFECT TRANSISTORSDEVICE
제목
Environmentally Stable and Reconfigurable Ultralow-Power Two-Dimensional Tellurene Synaptic Transistor for Neuromorphic Edge Computing
저자
Yoon, JeechanYou, BolimKim, YunaBak, JinaYang, MinoPark, JihyangHahm, Myung GwanLee, Moonsang
DOI
10.1021/acsami.3c00254
발행일
2023-04-12
유형
Article
저널명
ACS Applied Materials and Interfaces
15
14
페이지
18463 ~ 18472