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High-Side nLDMOS Design for Ensuring Breakdown Voltages over 100V

  • WON TAEYOUNG
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High-Side nLDMOS Design for Ensuring Breakdown Voltages over 100V
저자
WON TAEYOUNG
학회명
Nano Korea 2010
개최지
일산 KINTEX Room 212
학회 개최일
2010-08-17 ~ 2010-08-20

ScholarWorks@인하대학교

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