A Comprehensive Analysis of Drain Sludge Formation Mechanism and Prevention Strategy in Advanced Packaging Process

초록

This study examines sludge formation in wastewater generated from advanced packaging processes and explores a surfactant-based prevention strategy. Wastewater from key processes, including carrier wafer bonding, photolithography, development, and debonding, contributes to sludge formation through complex chemical interactions. Six key chemicals, including bonding glue, hexamethyldisilazane (HMDS), photoresist (PR), PR developer, debonding cleaner, and water are analyzed to identify the primary factors for sludge formation. The results indicate that black solid sludge formation is primarily triggered by the hydrolysis and condensation of HMDS, leading to the generation of sludge seeds. PR materials then interact with these silicon-based seeds through hydrophobic-hydrophobic interactions, accelerating sludge growth. To mitigate this issue, three surfactants?cetyltrimethylammonium bromide (CTAB), polyethylene glycol (PEG), and commercial shampoo?were tested in water containing HMDS and PR. The surfactants effectively inhibited sludge formation by preventing hydrophobic interactions between PR and HMDS-derived sludge seeds. Among them, CTAB demonstrated the highest prevention efficiency, followed by shampoo and PEG, suggesting that surfactants with longer hydrophobic chains are more effective at binding PR and suppressing sludge growth. These findings suggest that incorporating surfactants into wastewater drainage systems offers a practical solution for preventing sludge-related issues, such as drain and pipe clogging, in advanced packaging processes, thereby presenting a promising wastewater management strategy for semiconductor manufacturing. †Corresponding Author: cmyoon4321@inha.ac.kr Acknowledgement: 본 연구는 2025년 정부(방위사업청)의 재원으로 국방과학연구소의 지원을 받아 수행된 미래도전국방 기술 연구개발사업임(No.915066201)