Gate-controlled Gas Sensor utilizing 1D-2D Hybrid Nanowire Network

초록

The gas sensors working at room temperature were attracting attention due to low energy consumption and stability to virulent gases. However, development of sensing properties are still primary challenges. Diverse reaction pathways and low adsorption energy for gas molecules are required to fabricate a gas sensor working at room temperature with high sensitivity, selectivity, and efficiency. In this presentation, we demonstrate enhancement of the gas sensing performance at room temperature via constructing hybridized nanostructure, such as 1D-2D hybrid of SnSe2 layers and SnO2 nanowire networks and controlling back-gate bias(Vg=1.5V). The effective and various reaction routes are developed by improved chemical interaction and the carrier concentration of 2D SnSe2 which fabricated on the surface of SnO2 nanowire network by chemical vapor deposition(CVD). By lowering the energy barrier for the adsorption on the reactive sites, which are controlled by the back gate, the response time was dramatically reduced. Consequently, we believe that research can contribute to improving the performance of room temperature working gas sensors.