Split-Gate based Electrostatic Doping Effect and Reconfigurable Palladium Diselenide PN Junction Diode

초록

Layered two-dimensional (2D) materials have great potential for the future electronic materials due to their outstanding electrical properties and atomically thin body. From these reasons, lots of efforts were put toward to discover a new 2D family member for the next generation 2D electronics and its applications. Among them, palladium diselenide (PdSe2) is a recently emerged 2D material and has an air-stable and strong ambipolar property. In this paper, we demonstrate the PdSe2-based split-gate field-effect transistor (SG-FET), which separated gate electrodes can control the electrostatic doping profile of the PdSe2 channel. By modulating the opposite polarities of PdSe2 channel, the PdSe2-based SG-FET can be operated as a homogeneous and reconfigurable pn junction diode. From the operation of PdSe2-based SG-FET, the single-inversion AND (SAND) logic gate is implemented, which is equivalent with a combination of NOT and AND logic gates. Thus, our device has a great capability to organize a function of SAND with more simple method, and it is applicable to detect phase difference as a phase leading or lagging signal.