Ferroelectric Field-Effect Transistor Synaptic Device With Hafnium-Silicate Interlayer

Kim, Sang Woo; Shin, Wonjun; Kim, Munhyeon; Kwon, Ki Ryun; Yim, Jiyong; Kim, Jeonghan; Han, Changhyeon; Jeong, Soi; Park, Eun Chan; You, Ji Won; Kim, Hyunwoo; Choi, Rino; Kwon, Daewoong

doi:10.1109/LED.2023.3324695

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Ferroelectric Field-Effect Transistor Synaptic Device With Hafnium-Silicate Interlayer

Kim, Sang Woo;
Shin, Wonjun;
Kim, Munhyeon;
Kwon, Ki Ryun;
Yim, Jiyong;
... Choi, Rino;
외 7명

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13

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13

초록

A ferroelectric field-effect-transistor (FeFET) with hafnium zirconium oxide ferroelectric layer and hafnium silicate (HfSiOx) interlayer (IL) is demonstrated. Compared to a FeFET with SiO2 IL, the proposed FeFET is confirmed to have faster program/erase operations, wider memory window, and the improved endurance/retention characteristics due to the higher dielectric constant of HfSiOx and superior interfacial state between HfxZr((1-x))O-2 and IL. The proposed FeFET demonstrates a power spectral density that is approximately two times smaller than that of conventional FeFETs and endurance exceeding 1010 cycles. This underscores its enhanced suitability for neuromorphic computing applications.

키워드

FeFETs; Iron; Threshold voltage; Hafnium compounds; Zirconium; Capacitance; Ferroelectric FET; HZO; high-kappa interlayer; synaptic devices; LOW-FREQUENCY NOISE

제목: Ferroelectric Field-Effect Transistor Synaptic Device With Hafnium-Silicate Interlayer

저자: Kim, Sang Woo; Shin, Wonjun; Kim, Munhyeon; Kwon, Ki Ryun; Yim, Jiyong; Kim, Jeonghan; Han, Changhyeon; Jeong, Soi; Park, Eun Chan; You, Ji Won; Kim, Hyunwoo; Choi, Rino; Kwon, Daewoong

DOI: 10.1109/LED.2023.3324695

발행일: 2023-12

유형: Article

저널명: IEEE Electron Device Letters

권: 44

호: 12

페이지: 1955 ~ 1958