High growth rate diamond synthesis in an atmospheric plasma jet

초록

The effects of the variables such as substrate pretreatment,CH4 concentration,substrate temperature and deposition time were studied at high growth rate diamond synthesis. The properties of synthesized diamond film were evaluated using scanning electron microscopy, X-ray diffractometry and Raman spectroscopy. The high quality films with high growth rate were deposited at 4% CH4, the substrate temperature of 950 - 1000 'C and the deposition time of 30 min.