The Preparation of a Fatigue-Free Bi4Ti3O12 Thin Film with Controlling Bi-Excess Using Sol-Gel Method

  • LEE WAN IN

초록

The sol-gel BIT film of ~150 nm thick film were grown on Pt/Ti/SiO2/Si substrates, and their ferroelctric property was analyzed.

제목
The Preparation of a Fatigue-Free Bi4Ti3O12 Thin Film with Controlling Bi-Excess Using Sol-Gel Method
저자
LEE WAN IN
학회명
The 16th International Symposium on Integrated Ferroelectrics