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Enhancing SiO2-SiO2 Bonding Strength in Cu/SiO2 Hybrid Bonding through Selective Silane Treatment
초록
A simple and effective approach is proposed to optimize SiO2-SiO2 interface bonding strength in Cu/SiO2 hybrid bonding through selective silane treatment. Hybrid bonding chips are spin-coated with hydrophilic (3-aminopropyl)triethoxysilane (APTES) and hydrophobic n-octyltriethoxysilane (OTES) solutions at 10 wt%. APTES selectively bonds to the SiO2 surface, demonstrating strong adhesive properties. Reducing the APTES concentration to 1.0 wt% decreases the gap between bonded chips, enhancing interface contact. Additionally, chips treated with 1.0 wt % APTES are heated at 300 °C, significantly enhancing the SiO2-SiO2 bonding strength. These findings contribute to advancements in hybrid bonding techniques, supporting the development of next-generation packaging technologies. Keywords : Cu/SiO2 bonding, Hybrid boding, Silane treatment, Advanced packaging, Bonding strength †Corresponding Author: cmyoon4321@hanbat.ac.kr
- 제목
- Enhancing SiO2-SiO2 Bonding Strength in Cu/SiO2 Hybrid Bonding through Selective Silane Treatment
- 저자
- Yoon Chang Min
- 학회명
- 2025년 춘계 한국마이크로전자 및 패키징학회