Gradual resistive switching and synaptic properties of ITO/HfAlO/ITO device embedded with Pt nanoparticles

Algadi, Hassan; Mahata, Chandreswar; Alsuwian, Turki; Ismail, Muhammad; Kwon, Daewoong; Kim, Sungjun

doi:10.1016/j.matlet.2021.130011

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Gradual resistive switching and synaptic properties of ITO/HfAlO/ITO device embedded with Pt nanoparticles

Algadi, Hassan;
Mahata, Chandreswar;
Alsuwian, Turki;
Ismail, Muhammad;
Kwon, Daewoong;
외 1명

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25

초록

ITO/HfAlO/Pt-NP/HfAlO/ITO RRAM device was fabricated with atomic layer deposited Pt-NPs. Controlled filament formation and multilevel conductance was observed due to enhancing local electric field near Pt-NPs. Resistive switching properties with ON/OFF ratio of > 10 and good endurance upto 500 cycles were achieved. Potentiation/depression characteristics were successfully demonstrated by applying increasing positive/negative voltage pulses. Gradual change in conductance was implemented for demonstration of spike-timing-dependent plasticity (STDP) learning which shows that the proposed RRAM device can be the possible candidate for electronic synaptic devices. (c) 2021 Elsevier B.V. All rights reserved.

키워드

Transparent RRAM; ALD Pt-nanoparticles; Multilevel conductance properties; STDP

제목: Gradual resistive switching and synaptic properties of ITO/HfAlO/ITO device embedded with Pt nanoparticles

저자: Algadi, Hassan; Mahata, Chandreswar; Alsuwian, Turki; Ismail, Muhammad; Kwon, Daewoong; Kim, Sungjun

DOI: 10.1016/j.matlet.2021.130011

발행일: 2021-09-01

유형: Article

저널명: Materials Letters

권: 298