진공증착법으로 제조한 PVDF 박막의 유전특성에 미치는 이온의 영향

초록

The dielectric properties of PVDF thin film have been studied in the frequency range from 5Hz to 7Hz at measuring temperature between 20 and 100℃. The anomalous increasing in dielectric constant and dielectric loss at low frequencies and high temperature is described for PVDF thin film containing ion impurities. In particulary, ion mobility of PVDF thin film fabricated at substrate temperature of 30℃ decreased from 2×10-5 to 3.07×10-7cm2/V·s. On the other hand, ion density increased abruptly from 1.49×1013 to 1.5×1016cm-3. It is concluded that the dielectric constants and dielectric loss are related to ion density than to ion mobility at low frequency and high temperatures.