Enhancement of the photoluminescence properties of Ga2O3nanowires by In2O3 coating

초록

We have fabricated Ga2O3-core/In2O3-shell nanowires by thermal evaporation of GaN powders On Au-coated and then coated Ga2O3 nanowires with In2O3 by sputtering. Transmission electron microscopy (TEM) and X-ray diffraction (XRD) analyses revealed that the core was a Ga2O3 single crystal with a monoclinic structure and that the shell was amorphous. Photoluminescence (PL) measurements at room temperature showed that uncoated Ga2O3 nanowires had a blue emission band centered at approximately 480 nm The intensity of the blue emission of Ga2O3 nanowires increased with increasing the In2O3 shell layer thickness. The highest emission intensity was obtained with a shell layer thickness of 10 nm. In addition, the origin of the PL intensity enhancement by SnO2 coating is discussed.