Atomistic Modeling of Boron Diffusion with Germanium Pre-amorphization for Ultra Shallow S/D Junction in nanometer-scale PMOS Devices

초록

In this paper, we report an atomistic simulation method using kinetic Monte Carlo (KMC) for understanding the physics of suppression of boron in the amorphized silicon film, which is compared with the results from continuum model as well as the experimental data. Finally, we estimate the contribution of the germanium pre-amorphization (PAI) effect on the reduction boron TED for specific range of ion implantation energies.