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Design of 100V High-side N-channel LDMOS Transistor for Breakdown Voltage Enhancement

  • WON TAEYOUNG
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Design of 100V High-side N-channel LDMOS Transistor for Breakdown Voltage Enhancement
저자
WON TAEYOUNG
학회명
제18회 한국반도체학술대회
개최지
해비치호텔&리조트제주
학회 개최일
2011-02-16 ~ 2011-02-18

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