Silicidation behaviors of the Co/metal/polycrystalline silicon

초록

The CoSi-CoSi2 phase trandition temperature is lower and morphological degration of the silicide layer occurs more sevrely for the Co/refravtory metal bilayer on the P-deped polycrystalline Si substrate than on the single Si substrate. Also, the final layer structure of the films after silicidation anneaing was found to depend strongly upon the interlayer metals. In the Co/Ti/poly-Si system, Si atoms pile up at the surface of the silicide layer, while no Si pile-up is obsered for the Co/Hf/poly-Si system.