Molecular Dynamics (MD) Calculation for Low-energy Ion Implantation Process with Dynamic Annealing Effect

초록

In this paper, we report a molecular dynamics (MD) simulation on the ion implantation for nano-scale CMOS devices with ultra-shallow junctions. In order to model the profile of ion distribution in nanometer scale, the molecular dynamics with a damage model has been employed with the Kinetic Monte Carlo (KMC) diffusion model used for the dynamic annealing between cascades. The concentration distribution of dopants during the ion implantation was calculated using the interaction potentials between atoms [1,2] from MD calculation.