Anti-ferroelectric property of Lead Zirconate (PbZrO3) Films Fabricated by Aerosol-Deposition Process

초록

Lead Zirconate (PZ) is one of the anti-ferroelectric materials. Anti-ferroelectric materials have been studied for various applications such as high-strain transducers, actuators and cooling devices, because their phase transform from anti-ferroelectric to ferroelectric phase on electric field. But, when anti-ferroelectric phase is switched to ferroelectric phase, PZ material generated mechanically break-down. In this study, PZ films on silicon wafer were fabricated by Aerosol Deposition (AD). By using AD method, interfacial reaction didn’t occur between silicon wafer and PZ films, because AD method was operated at room temperature. Also the PZ films could have nano-sized grain and dense films. So PZ films show as nano domain of relaxor. Thank to them, PZ films would have the slim polarization-electric field hysteresis loop and reduce mechanically break-down.