GaAs/AlGaAs 양자우물구조의 PL에서의 수소화 영향

초록

The effects of hydrogenation and rapid thermal annealing(RTA) on GaAs/AlGaAs multi quantum well structure, consisting of three GaAs quantum wells with different thickness, has been investigated by photoluminescence(PL). The structures was grown by molecular beam epitaxy on (100) semi-insulating GaAs substrate. Three GaAs quantum wells of 3, 6 and 9 nm thickness are placed 15 nm apart through 105 nm from the surface. The samples used in this study are prepared with different growth temperature. PL intensities from the quantum wells of hydrogenated samples are increase selectively. Line width and peak position in the PL spectra were little changed. PL intensities from the samples were insignificantly changed by RTA treatment.