상세 보기
산화막 식각에 적용된 E-ICP효과와 형상단면 비교
Oxide Etching Characteristics and Etched Profiles by the Enhanced Inductively Coupled Plasma
초록
The etch rate of SiO2 in Enhanced - Inductive Coupled Plasma (E-ICP) and CW-ICP systems are investigated. As addition of O2 to CF4 gas increases oxide etch rate, E-ICP etching shows the highest etch rate (about 6000Å) at an optimized condition with 30% O2 in CF4 70Hz at the modulation frequency of 70Hz. E-ICP also shows better etch profile than CW-ICP.
- 제목
- 산화막 식각에 적용된 E-ICP효과와 형상단면 비교
- 제목 (타언어)
- Oxide Etching Characteristics and Etched Profiles by the Enhanced Inductively Coupled Plasma
- 저자
- O BEOM HOAN
- 학회명
- 한국전기전자재료학회 2000년도 하계학술대회 논문집