A strategy to boost external quantum efficiency of organic light-emitting transistors

초록

Organic light-emitting transistors (OLETs) have emerged as promising light-emitting electronics, combining the functions of a transistor and a diode in a single device. OLETs typically possess outstanding electrical properties but have inefficient optical properties. Here, based on optical simulations, a strategy of how to improve the light output as well as reduce optical energy losses in OLETs is performed. The results reveal that the main optical energy losses occur via the waveguide mode by the organic layers and through absorption by the gate material. These energy losses in OLETs can be significantly reduced by appropriately adjusting the thicknesses and refractive indices of the transporting layers as well as those of the gate materials. This device design opens perspectives in the development of the efficiency of OLETs as high as 40% of external quantum efficiency.

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