InGaAs/GaAs 양자점에서 AlGaAs 삽입층의 효과

초록

We have studied that the wavelength modification of InGaAs/GaAs quantum dots by very thin AlGaAs inserting laser (IL), Thin AlGaAs inserting laser below 10 ㎚ of thickness was positioned right after the formation of self-assembled InGaAs quantum dots on GaAs buffer laser. The low temperature (15K) photoluminescence peak typically appers at around 1.1 ㎛ in the sample without IL whereas it is red-shifted up to 1.25 ㎛ with IL as IL thickness increases.