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Iodinated alternating copolymer as a chemically amplified resist for extreme UV lithography
- Ku, Yejin;
- Wy, Gyuchan;
- Kim, Gayoung;
- Lee, Jinseok;
- Lee, Jin-Kyun;
- 외 3명
SCOPUS
0초록
We proposed an iodinated alternating copolymer resist for extreme UV lithography to mitigate stochastic effects in resist materials by ensuring chemical uniformity for high-resolution patterning. As a first approach, an iodinated maleimide (IPMi) and tert-butoxystyrene (tBSt) were copolymerized via reversible-deactivation radical polymerization to yield IAC-1 with a narrow molecular weight distribution. However, the intrinsic hydrophobicity of iodinated moieties hindered positive-tone development in the tetramethylammonium hydroxide standard developer. To address this challenge, a composition-modulated alternating copolymer was designed to maintain structural consistency while providing controlled solubility. By incorporating and adjusting the content of a third hydrophilic monomer, hydroxylated maleimide (HPMi), the optimized polymer IAC-3 was synthesized. This material achieved positive-tone patterning down to 85nm under e-beam lithography and demonstrated solubility modulation under EUV exposure at 15 mJ/cm2. These findings highlight the potential of iodinated alternating copolymers with tailored compositions as a promising EUV resist platform. © COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.
키워드
- 제목
- Iodinated alternating copolymer as a chemically amplified resist for extreme UV lithography
- 저자
- Ku, Yejin; Wy, Gyuchan; Kim, Gayoung; Lee, Jinseok; Lee, Jin-Kyun; Kim, Jeongsik; Hur, Myounghyun; Kim, Jaehyeon
- 발행일
- 2026-04
- 유형
- Conference paper
- 저널명
- Proceedings of SPIE - The International Society for Optical Engineering
- 권
- 13983