Iodinated alternating copolymer as a chemically amplified resist for extreme UV lithography

  • Ku, Yejin; 
  • Wy, Gyuchan; 
  • Kim, Gayoung; 
  • Lee, Jinseok; 
  • Lee, Jin-Kyun; 
  • 외 3명
Citations

SCOPUS

0

초록

We proposed an iodinated alternating copolymer resist for extreme UV lithography to mitigate stochastic effects in resist materials by ensuring chemical uniformity for high-resolution patterning. As a first approach, an iodinated maleimide (IPMi) and tert-butoxystyrene (tBSt) were copolymerized via reversible-deactivation radical polymerization to yield IAC-1 with a narrow molecular weight distribution. However, the intrinsic hydrophobicity of iodinated moieties hindered positive-tone development in the tetramethylammonium hydroxide standard developer. To address this challenge, a composition-modulated alternating copolymer was designed to maintain structural consistency while providing controlled solubility. By incorporating and adjusting the content of a third hydrophilic monomer, hydroxylated maleimide (HPMi), the optimized polymer IAC-3 was synthesized. This material achieved positive-tone patterning down to 85nm under e-beam lithography and demonstrated solubility modulation under EUV exposure at 15 mJ/cm2. These findings highlight the potential of iodinated alternating copolymers with tailored compositions as a promising EUV resist platform. © COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.

키워드

alternating copolymer; EUV lithography; EUV photoresist; iodine incorporation; solubility control
제목
Iodinated alternating copolymer as a chemically amplified resist for extreme UV lithography
저자
Ku, Yejin; Wy, Gyuchan; Kim, Gayoung; Lee, Jinseok; Lee, Jin-Kyun; Kim, Jeongsik; Hur, Myounghyun; Kim, Jaehyeon
DOI
10.1117/12.3089228
발행일
2026-04
유형
Conference paper
저널명
Proceedings of SPIE - The International Society for Optical Engineering
권
13983