Structure and photoluminescence properties of Zn2Sn04 nanowires

  • CHONGMU LEE

초록

Zn2Sn04 nanowires were synthesized on Si substrates by thermal evaporation of a mixture of ZnO. Sn02 and graphite powders. The nanowires were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The ZnSnO4 nanowires varied from 10 to 100 nm in diameter and up to a few hundred of micrometers in length. Transmission electron microscopy and X-ray diffraction revealed that Zn2SnO4 nanowires are of single crystal nature with a rhombohedral structure. Photoluminescence measurements showed that Zn2Sn04 nanowires had a sharp ultraviolet emission peak at approximately 375 nm as well as abroad green emlSSlOn band centered at approximately 510 nm. The violet emission of Zn2Sn04 nanowires exhibits a blue shift by approximately 5 nm compared that of ZnO nanowires and the visible emission of ZnO nanowires shifted from the orange region to the green region, which should be attributed to the narrowing of Eg. Thermal annealing enhanced the green emission but degraded the ultraviolet emission of the Zn2Sn04 nanowires. Inaddition, the origin of the enhanced luminescence of Zn2Sn04 nanowires compared to ZnO and SnO2 nanowires is discussed.

제목
Structure and photoluminescence properties of Zn2Sn04 nanowires
저자
CHONGMU LEE
학회명
제 8차 강유전체 연합 심포지엄
개최지
무주리조트 (카니발 컬쳐 팰리스)
학회 개최일
2012-02-12 ~ 2012-02-14