고주파 플라즈마 CVD에 의한 H2-CH4계로부터 다이아몬드 박막의 합성

초록

Diamond thin films were deposited on n-type(100) Si wafers from H2-CH4 gas mixture byrf PACVD. Prior to deposition, mechanical scratching was done to improve density of nucleation sites with diamond paste of 3um. The microstructure of deposited diamond thin films was studied by suing the following conditions : discharge power of 500W, H2 flow ratd of 50sccm, reaction pressure of 20torr, and CH4/H2 ratio of 0.3-1%. The deposited diamond thin films showed that the crystallite was increased at the lower methane concentration. The deposited thin films were characterized by Scanning Electron Microscopy Raman Spectroscopy and Fourier-Transform Infrared Spectroscopy