약반전 증폭기를 이용한 4차 ΣΔ변조기 설계

Design of a 4th Order ΣΔ CMOS Modulator Using Subthreshold OP-Amp
  • YOON KWANG SUB

초록

This paper describes a low power 4th order ΣΔ modulator for an implantable chip to acquire bio signals such as EEG(Electroencephalogram) or ECG(Electrocardiography) and EMG(Electromyography). In order to reduce a power consumption of the proposed modulator, an OP-Amp operating in a subthreshold region is employed with a time-interleaving technique. The proposed time-interleaving method allows the proposed modulator to utilize two op-amps operating in a subthreshold region two times and to behave as 4th order delta-sigma modulator which usually requires four op-amps. The chip is fabricated in a 0.18um CMOS n-well 1 poly 6 metal process. The core chip area occupies 950um x 800um, and the chip consumes 360uW with a power supply voltage of 1.8V. Simulation results show SNDR of 85.7dB and ENOB(Effective Number Of Bit) of 13.9bit, at input signal bandwidth of 1kHz and clock frequency of 512kHz.

제목
약반전 증폭기를 이용한 4차 ΣΔ변조기 설계
제목 (타언어)
Design of a 4th Order ΣΔ CMOS Modulator Using Subthreshold OP-Amp
저자
YOON KWANG SUB
학회명
2016년 대한전자공학회 하계학술대회
개최지
재주도
학회 개최일
2016-06-22 ~ 2016-06-24