A study on the oxide etching characteriostics using helicon plasma source

초록

In deveolping the high density memory device fabrication, the etching of finr pattern is becoming increasingly important. Definition of ultra fine line and space pattern and minimization of damage and contamination of substrate are essential process. Therefore, th development of high density plasma source is being widely studied. In this study, helicon plasma oxide etcher is used to investigate oxide etching characteristics.

제목
A study on the oxide etching characteriostics using helicon plasma source
저자
LEE SEOK HYUN
학회명
The 3rd Asia-Pacific conference on plasma science & Technology