3D Modeling of Sputter Process with Monte Carlo Method

초록

In this paper, a rigorous three-dimensional Monte Carlo calculation to simulate the sputter yield as a function of the incident ion energy and the incident angle as well as the atomic ejection distribution of the target is presented. The sputter yield of the target atom (Al and Cu) has been calculated for the different species of the incident atoms with the incident energy range of 10eV ~ 10KeV, which coincides with the previously reported experimental results.