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초록
The process of Direct Bonding Copper(DBC) is performed by a special melting technique for spinell reaction between CuO and Al2O3. In order to develop direct bonding copper with good thermal conductivity and bonding strength. Cu filler was evaporated on alumina substrate by sputtering. Subsequently, Cu filler on alumina substrate was pre-oxidized at 400℃in air atmosphere and then stabilized at 1000℃ in N2 gas atmosphere. The copper sheet(300㎛) was bonded on Cu-oxidizies alumina substrate in N2 gas atmosphere at 1067~1072℃. It was found that good direct bonding copper conditions were successfully obtained by heating up to a temperature at 1071℃ for 30min. Bonding strength between Cu and Al2O3 was 80N/cm. Obervation and analysis for DBC microstructure showed that reaction compound CuAlO2 and CuAl2O4 were approved th be formed in the vicinity if between Cu on alumina substrate.
- 제목
- 스퍼터링법에 의한 DBC의 미세조직과 기계적성질에 관한 연구
- 제목 (타언어)
- Microstructure and Mechnical Properties of Direct Bonding Copper on Copper Evaporated Alumina Substrate by Sputtering
- 저자
- Chi Hwan Lee
- 학회명
- The 3rd International Symposium on Designing, Processing and Properties of Advanced Engineering Materials