Modeling of Low-energy Ion Implantation Process by Molecular Dynamics (MD) Approach

초록

In this paper, the MD calculation is reported for nano-scale devices with ultra-shallow junctions. In order to model the profile of ion distribution in nanometer scale, the molecular dynamics with a damage model has been employed. In order to model an ultra shallow junction, a recoil interaction approximation model was applied for ion implantation. The Ziegler-Biersack-Littmark (ZBL) potential model has been used for the interaction among atoms and the distribution of the concentration of dopants were calculated using the environment-dependent inter-atomic potential (EDIP).