Control of Seeding Structures of Air-stable n-type PTCDI-C13 onto Hydrophobic Dielectrics

초록

N,N’-ditridecyl-3,4,9,10-perylenetetracarboxylic diimide (PTCDI-C13) is one of the promising n-type organic semiconductors with an excellent air-stability and controllable crystal structures. To optimize charge-carrier transport in PTCDI-C13 based OFETs, here, the crystal structures and orientations of PTCDI-C13 vacuum-deposited on various dielectric surfaces were systematically investigated. Based on atomic force microscopy (AFM) and grazing-incidence X-ray diffraction (GIXD) analyses of these films, the electrical characteristics (μFET, Vth, and etc.) of PTCDI-based OFETs could be correlated with the corresponding crystal structures and orientations.