Poly(4-vinylphenol-co-methyl methacrylate)/Hafnium Oxide Nanocomposite Gate Insulators for Organic Thin-Film Transistors

초록

We fabricate 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-Pn) thin-film transistors (TFTs) with nanocomposite insulators. The insulator layers consist of both poly(4-vinylphenol-co-methyl methacrylate) and high-dielectric constant hafnium oxide (HfO2) nanoparticles. The HfO2 nano-particles are ball-milled for sufficient dispersion in a nanocomposite solution to enable solution process methods to be used in preparing the insulator layers. The nanocomposite insulators demonstrate high capacitances and improve the performance of TIPS-Pn TFTs. Nonetheless, particle aggregates are produced in the nanocomposites solution with high HfO2 concentrations, generating detrimental effects on the dielectric properties and the TFT performance. Our experimental result implies that the optimum concentration of HfO2 nanoparticles in a mixed solution will find to be similar to 11.5 wt%.

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