Selective EGaIn Electrode Printing Enables High- Performance β-Ga₂O₃ Schottky Diodes and MESFETs

초록

β-Gallium oxide (β-Ga₂O₃) is a promising ultra-wide bandgap semiconductor for next-generation power and AI electronics, but forming low-resistance Ohmic contacts remains difficult. We developed a low-temperature, diffusion-driven screen-printing method using eutectic gallium?indium (EGaIn) as both Ohmic and rectifying contacts on β-Ga₂O₃. EGaIn and Au electrodes were printed in one step without post-annealing or etching, enabling high-performance Schottky diodes and metal semiconductor field effect transistors (MESFETs) with on/off ratios up to 10? and a subthreshold swing of 71 mV/dec. This scalable, damage-free process offers a new pathway for flexible and high-efficiency β-Ga₂O₃ electronics.