Optimization of hot-pressed n-type SbI3-doped Bi2Te2.85Se0.15 compounds

hot-presse법에 의한 n-type SbI3-doped Bi2Te2.85Se0.15 열전재료의 최적화
  • Chi Hwan Lee

초록

The n-type 0.1 wt% SbI3-doped Bi2Te2.85Se0.15 compounds were fabricated by hot pressing in the temperature range 380 to 420 ℃ under 200 MPa in Ar. The density of the compounds was highly densified up to 99.2 % of theoretical density. The grains were preferentially oriented through the hot pressing. As the pressing temperature was increased, the density and the degree of preferred orientation of grains were increased, thus giving rise to an increase in the figure of merit. The figure of merit hot pressed at 420 ℃ was 2.35×10-3/K.

제목
Optimization of hot-pressed n-type SbI3-doped Bi2Te2.85Se0.15 compounds
제목 (타언어)
hot-presse법에 의한 n-type SbI3-doped Bi2Te2.85Se0.15 열전재료의 최적화
저자
Chi Hwan Lee