Methoxy-Silane-Driven Polymerization as an Alternative to Chip-Stacking Films

초록

In this study, methoxy-silane polymerization is proposed as an alternative to conventional die attach film (DAF) for reliable chip stacking. A methoxy-silane layer was formed on Silicon (Si) chips through controlled silane treatment. Specifically, 3-glycidyloxypropyltrimethoxysilane (GPTMS) was spin-coated onto the Si chip surface using a 2.0 wt% ethanol-based solution, followed by a hydrolysis?condensation reaction. Subsequent exposure to 10 mM H2SO4 at 100 °C initiated epoxide ring-opening polymerization, and post-curing at 120 °C further enhanced crosslinking, yielding a nanometer-scale methoxy-silane-derived polymer adhesive layer. The resulting polymer layer exhibited less than 1% of the thickness of conventional DAF, while maintaining high shear strength (3.2 MPa), void and delamination-free interfaces. - 본 연구는 2025년도 정부(교육부)의 재원으로 한국연구재단의 지원을 받아 수행된 기초연구사업임(RS-2022-NR070869). Keywords: Die attach film, 3-Glycidyloxypropyltrimethoxysilane, Polymer adhesive layer, Chip-stacking, Semiconductor packaging