Structural and Photoluminescence Features of N-type Porous Silicon Prepared by Electrochemical Anodic Etching

초록

We investigated the structural and optical features of n-type porous silicon; the PS was prepard by electrochemcial anodic etching of n-type silicon wafers in a HF solution of HF:C2H5OH:H2O=1:2:1 under illuminaiton of a halogen lamp. The structural and PL features of the PS were investigaed in terms of etching time, current density and aging conditions.