Sequential process modeling for nano-scale NMOS using kinetic Monte Carlo

초록

In this paper, we apply kinetic Monte Carlo method to sequential process simulation of sub-nanometer CMOS devices. We simulate ion implantation with damage model using binary collision approximation (BCA) for mask-patterned structure, and diffusion of impurities using kinetic Monte Carlo (KMC). In Fig.1 (a, b), depict the simulation results using atomistic model of continuum model of B and As in CMOS devices. Also, we simulate boron retardation during thermal annealing after co-implantation of B and As with the annealing process.