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Performance Enhancement of Ferroelectric Hafnium-Zirconium Oxide Tunnel Junctions by Nitrogen Incorporation
- Kim, Jaekyeong;
- Nguyen, Manh-Cuong;
- Choi, Rino
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0초록
Hafnium-zirconium oxide (HZO) ferroelectric tunnel junctions (FTJs) were fabricated using a metal-insulator-ferroelectric-insulator-metal structure with a top interlayer of HfOxNy deposited by reactive sputtering. The tunneling electroresistance of the resulting FTJ devices increased significantly as the nitrogen flow in the top HfOxNy interlayer increased, reaching 700 with reasonable retention characteristics. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) provided evidence of orthomorphic-phase enhancement and the top interlayer quality improvement, respectively.
키워드
Hafnium compounds; Switches; Electrodes; Nitrogen; Sputtering; X-ray scattering; Films; Tunneling; Junctions; Deconvolution; HfOxNy; Ferroelectric; ferroelectric tunnel junction (FTJ); interlayer; nitrogen incorporation; reactive sputtering; tunnel junction; tunnel junction
- 제목
- Performance Enhancement of Ferroelectric Hafnium-Zirconium Oxide Tunnel Junctions by Nitrogen Incorporation
- 저자
- Kim, Jaekyeong; Nguyen, Manh-Cuong; Choi, Rino
- 발행일
- 2026-03
- 유형
- Article
- 권
- 73
- 호
- 3
- 페이지
- 1292 ~ 1296