Recrystalization by Annealing on the Copper Films deposited by Pulsed Electroplating on ECR Plasma Cleaned Copper Seed layer

초록

Cu seed layers deposited by magnetron sputtering onto the tantalum nitride barrier film were given ECR plasma treatment to enhance Cu nucleation prior to Cu electroplating. Then, the copper films were electrodeposited and annealed by various processes such as vacuum furnace annealing (FA), rapid thermal nitridation (RTN) at various temperatures ranging from 200 to 500. It appears that as a result of annealing above 4000C the copper film undergoes a complete recrystallization. Since the intersection of the twin boundaries depend on the orientations of the grains, we could find that more than one crystal phase might differ for different types of thermal treatment, it is found that the grains tend to orient along the (111) direction for all cases. We also found the resistivity decreased with the increase in the annealing temperature.