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초록
In this paper, we propose a cell advancing method which demonstrates the improvement in comparison with the traditional cell method for accurate topography simulation. For the subsequent FEM procedure, mesh generation is conducted in the simulated volume of topography.
- 제목
- Fast and Accurate Simulation for Topography in Nanometer Semiconductor Process
- 저자
- WON TAEYOUNG
- 학회명
- International Conference on Solid State Devices and Materials