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초록
A novel technique, named as Enhanced -ICP, for the better etch process, has been proposed. Here, we report improved result of the E-ICP. The photoresist etch uniformity of better 1% within 10cm in diameter has been accomplished with improved plasma density.
- 제목
- Improved etching technique of E-ICP
- 제목 (타언어)
- E-ICP를 이용한 식각공정 개선
- 저자
- PARK SEGEUN
- 학회명
- Proc. International Conference of VLSI and CAD