Pyroelectric Properties of the PLT(10) Thin Film on the P-doped Poly Silicon

초록

We have studied the pyroelectric properties of the PLT(10) thin film deposited on a P-doped poly-Si electrode by using the sol-gel method. Measurement of the dielectric constant as a function of temperature shows the typical characteristics of a ferroelectric. The dielectric constant reaches a maximum at 295C, which can be thought of as the Curie temperature. The PLT(10) thin film on P-doped poly-Si fabricated in this research shows excellent pyroelectric properties. The pyroelectric coefficient and the figures of merit, Fv and FD at room temperature are measured as 5.76X10-8C/cm2C, 1.17X10-10Ccm/J and 0.93X10-8Ccm/J, respectively.