Nano-scale Device Modeling and Simulation: FinFET

초록

In this paper, two-dimensional quantum-mechanical (QM) simulation of FinFET is reported. Current-voltage (I-V) characteristics are compared with the experimental data. Device optimization has been performed in order to suppress the short-channel effect (SCE) including the sub-threshold swing, threshold voltage roll-off, drain induced barrier lowering (DIBL). The QM simulation is compared with the classical approach in order to understand the influence of the electron confinement effect.