Functionalization of SiO2 Dielectric Layer with Silanes for Hybrid Bonding Optimization

초록

A simple and effective strategy is proposed to enhance SiO2?SiO2 interface bonding strength in Cu/SiO2 hybrid bonding (HB) through selective silane surface treatment. In this study, hybrid bonding chips are spin-coated with 10 wt% solutions of hydrophilic (3-aminopropyl)triethoxysilane (APTES) and hydrophobic n-octyltriethoxysilane (OTES). APTES selectively coated onto the SiO2 surface, exhibiting strong adhesion characteristics. APTES with 1.0 wt% decreases the interfacial gap between HB chips. In addition, post-treatment annealing at 300?°C further enhances the bonding performance between the insulating layers (SiO2?SiO2). Conclusively, this study presents a method to improve the bonding strength of hybrid bonding, an advanced technology for high-performance semiconductor packaging, by introducing silane treatment. - 본 연구는 2025년도 정부(교육부)의 재원으로 한국연구재단의 지원을 받아 수행된 기초연구사업임(No. 2022R1A6A1A03051705). Keywords: Electroless deposition, Silylation, Low temperature, Cu/SiO2 hybrid bonding, Advanced packaging.