The Effect of High-Pressure Hydrogen or Deuterium Annealing on Electrical Performance of Indium Gallium Zinc Oxide Thin-Film Transistors

초록

study examined the effects of hydrogen (H-2) or deuterium (D-2) annealing on indium gallium zinc oxide (IGZO) channels for the staggered bottom-gate thin-film transistor (TFT). High-pressure annealing (HPA) at 10 bar was used to diffuse and control the amount of H-2 and D-2 atoms in IGZO thin films. H-2 and D-2 doping samples were compared with Ar annealed samples to exclude the thermal effects. The performance of both H-2 and D-2 annealed devices was superior to that of the Ar annealed device. The reliability of H-2 and D-2 doping devices under positive bias stress was improved due to the defect passivation of H-2 and D-2. Larger degradation of the H-2-annealed sample under negative illumination bias stress (NIBS) was observed compared to the Ar-annealed sample, which was explained by the release of positive H-2 ions from O-H bonding by the light radiation. With D-2 doping, the stability under the NIBS and field-effect mobility was improved significantly compared to the H-2 and Ar annealed TFTs (11.2 and 10.6 cm(2)V(-1)s(-1)). The large D-2 isotope for slow diffusive ability significantly improves the performance and stability of IGZO TFTs.

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