Strategy for Low Temperature HZO Ferroelectric Capacitors for Back-End of Line Applications

초록

In this report, we discuss methods for obtaining the orthorhombic phase in hafnia-based materials, a necessary condition for the emergence of ferroelectricity. Those methods, including stress engineering with a top electrode, high-pressure annealing, and physical/chemical densification through controlled deposition conditions, can be performed at temperatures suitable for integration into BEOL 3D structures and flexible, wearable technologies. By successfully implementing these techniques, hafnia-based ferroelectric materials can be utilized in a variety of advanced applications.

키워드