RF 반응성 스퍼터링에 의한 비정질 carbon nitride 박막의 제조에 관한 연구

초록

Amorphous carbon nitride thin films were prepared on pretreated silicon(100) substrate in sputtering graphite target by activated gas phase using RF reactively sputtering. We measured the FT-IR spectrum to identify C≡N(nitrile)stretching mode(2200cm-1), C-H stretching mode(2800cm-1), C-H bending mode, C=C stretching mode C=N(imino) mode(1680cm-1), and the XPS to investigate chemical structure of surface. By the results of FT-IR and XPS spectrum, We confirmed that amorphous carbon nitride films with type1 (C(1s): 285.9[eV], N(1s): 398.5[eV]) and type 2(C(1s): 287.5[eV], N(1s): 400.2[eV]) successfully were synthesized by RF reactively sputtering