소성공정에 의한 유리막과 Glass/Silicon 계면 특성

초록

Surface passivation using glass powders results in good reliability for high voltage silicon power device. In this paper, Zinc borosilicate glass was prepared for the purpose of passivating, and a deposition technique of glass films on the silicon surface by electrophoresis in which acetone is used as a suspension edium and a measurement technique of C-V curve has been investigated. Properties were compared using SEM, XRD, C-V curve as a function of firing condition, temperature and atomosphere. I can get the fine films 5.8um thickness with Zinc borosilicate glass As a result of investigation of glass films, it has been found that pre-firing and annealing play an important role to achieve uniform, fine, reliable glass deposition films and Glass/Silicon interface